Compact transistor models, based on measured IV and S-parameters, allow designers to shift focus from transistor designs to circuit designs. Extracted from quasi-isothermal pulsed IV and pulsed S-parameter data and validated with load-pull characterization, compact transistor models contain a reduced set of parameters. Unlike other model types, compact models take into account complex phenomena, such as electro-thermal and trapping effects. For simulations under nonlinear operating conditions, responses to complex modulated signals (such as EVM or ACPR) are accurately predicted as low-frequency and high-frequency memory effects are taken into account. Compact transistor models are ideal for die-level applications, as developing such a model from IV and S-parameters is straightforward and relatively quick.
Typical Pulsed IV Curve Traces